Vidwan-ID : 150467



  • Dr Anbarasu Manivannan

  • Professor
  • Indian Institute of Technology Madras
Publications 2014 - 2022

Publications

  • 33
    Journal Articles
  • 2
    Review
  • 6

Citations / H-Index

169 Citations
8 h-index
130 Citations

Altmetrics

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Co-author Network


Expertise

Electrical and Electronic Engineering

Nanoelectronics; Non-volatile memory; Phase change memory, novel selector devices and 3D Crosspoint Memory, Chalcogenide-based phase change materials for electrical, optical and optoelectronic applications.

Personal Information

Dr Anbarasu Manivannan

Male
Department of Electrical Engineering, Indian Institute Of Technology, Madras, Chennai, Tamil Nadu, India
Chennai, Tamil Nadu, India - 600036


Experience


Qualification

  • Ph.D.

    Indian Institute of Science Bangalore

  • B.E.

    Bharathiar University


Doctoral Theses Guided

2020

EXPLORING THE ULTIMATE SPEED OF THRESHOLD SWITCHING IN PHASE CHANGE MEMORY DEVICES

Nishant Saxena, Indian Institute of Technology Indore

2020

Impact of Interfacial Effects, Process Variation and Heavy-Ion Irradiation on the Performance of Scalable Phase Change Memory Devices

Suresh D, Indian Institute of Technology Indore

2019

Investigations on wet and dry laser assisted texturing on flexible polymeric substrate and their suitability towards photovoltaic applications

Ashish Kumar Shukla, Indian Institute of Technology Indore

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2020

EXPLORING THE ULTIMATE SPEED OF THRESHOLD SWITCHING IN PHASE CHANGE MEMORY DEVICES

Nishant Saxena, Indian Institute of Technology Indore

2020

Impact of Interfacial Effects, Process Variation and Heavy-Ion Irradiation on the Performance of Scalable Phase Change Memory Devices

Suresh D, Indian Institute of Technology Indore

2019

Investigations on wet and dry laser assisted texturing on flexible polymeric substrate and their suitability towards photovoltaic applications

Ashish Kumar Shukla, Indian Institute of Technology Indore

2018

Unravelling the Dynamics of Ultrafast Crystallization and the Evolution of Local Structure in Phase Change Materials

Smriti Sahu, Indian Institute of Technology Indore

2018

Investigations on Ultrafast Electrical Switching Dynamics of In-Sb-Te Phase Change Memory Devices and Their Suitability for Multi-bit Data Storage Applications

Shivendra Kumar Pandey, Indian Institute of Technology Indore

2018

Exploring the dynamics of threshold switching and electronic properties of Ag, In-doped Sb2Te phase change material for universal memory

Krishna Dayal Shukla, Indian Institute of Technology Indore

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